The following technical papers and reprints are available from MDC at no charge.
Permittivity Testing has gained importance due to heightened interest in novel dielectric materials for use in the next generation of semiconductor devices. This article discusses proper measurement techniques and the issues that can interfere with measurement accuracy. Basics of permittivity testing are covered along with errors that can affect the accuracy of the technique. Also included are techniques to reduce the effects of these issues on the measured permittivity.
Production TVS MeasurementsThe Triangular Voltage Sweep (TVS) incorporates a quasi-static C-V curve, measured at a high temperature, to measure mobile ion contamination at a much higher throughput than conventional CVBT (capacitance-voltage, bias-temperature) measurements. However, traditional TVS Measurements require the operator to select the end points of the mobile ion peak to determine the area to analyze.
A production TVS method must have accuracy, ease of implementation, minimum operator involvement, and the possibility of automated wafer handling. By comparing a quasistatic C-V cure to a high frequency C-V curve, it is possible to automate the analysis of TVS measurements, allowing for production measurements.
This technical note discusses issues related to the proper configuration of a conventional, multi-frequency capacitance meter to get the optimum C-V curve for comparison with the associated quasi-static TVS measurement for autonomous analysis.
C-V Plotting: Myths and Methods
Capacitance-voltage (C-V) measurement is one of the most common process monitoring diagnostics employed in device manufacturing. Yet, despite established standards and the techniques longevity, C-V plotting is often performed with incorrect techniques, on improper samples, or in a way that gives misleading results. This article examines several aspects of erroneous techniques and clairifies correct measurement procedures.
Capacitance-Time Measurements on MOS Devices for Minority Carrier Lifetime Determination
Capacitance-Time (C-T) measurement may be used to determine generation lifetime of MOS devices. Multiple analyses of the data are discussed along with proper measurement techniques.
On-Line Capacitance-Voltage Doping Profile Measurement of Low-Dose Ion Implants.
Overview of the Analysis of C-V data to extract doping profiles is discussed. Low-dose implants in the 1011 - 1012 -cm-2 range are measured and analyzed.
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