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MOS CAPACITANCE-TIME MEASUREMENT AND ANALYSIS
The Capacitance-Time transient resulting from an MOS device pulsed into deep depletion reveals important information about bulk properties of the semiconductor and about damage or contaminants introduced during processing.
The Zerbst analysis gives carrier
generation lifetime and surface recombination velocity. An additional analysis of lifetime
versus depth can measure lifetime uniformity in epitaxial layers and can detect
differences due to denuded zones or implant damage. Measurements can be made at elevated
temperatures to accelerate recovery time. |
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