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GATE OXIDE INTEGRITY OPTION

Oxide integrity of MOS devices can be evaluated by various techniques such as Time Dependent Dielectric Breakdown, Charge to Breakdown, or ramped voltage.  When used with a prober, map distribution of breakdown fields.  Output the data using histograms, cumulative failure, or Weibull plots.

Measurements include:

• Time Zero Breakdown (Ramped)

• Time Dependent Dielectric Breakdown (Current or Voltage)

• Current-Time (JT)

• Pulsed Voltage Breakdown

• Dielectric Wearout Tests

• Current-Voltage

Histograms give a visual presentation of percentage failures versus breakdown field.

Cumulative Failure plots are another way of viewing data.

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